Fairchild Semiconductor N/A PZTA06 Datenbogen

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

MPSA06 / MMBTA06 / PZTA06 Rev. B0

1 

March 2011

• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from Process 33.

T

a

 = 25

°C unless otherwise noted 

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
    operations.

T

a

 = 25

°C unless otherwise noted 

* Device mounted on FR-4 PCB 1.6” 

× 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36mm 

× 18mm × 1.5mm; mounting pad for the collector lead min. 6cm

2

.

V

CEO

Collector-Emitter Voltage

80

V

V

CBO

Collector-Base Voltage

80

V

V

EBO

Emitter-Base Voltage

4.0

V

I

C

Collector Current - Continuous

500

mA

T

J, 

T

stg

Operating and Storage Junction Temperature Range

- 55 to +150

°C

P

D

Total Device Dissipation
Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

R

θJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W