Fairchild Semiconductor N/A NZT753 Datenbogen

©2003 Fairchild Semiconductor Corporation

Rev. A, April 2003

T

A

=25

°

C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150

°

C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

A

=25

°

C unless otherwise noted

*Pulse Test: Pulse Width 

≤

 300

µ

s, Duty Cycle 

≤

 2.0%

T

A

=25

°

C unless otherwise noted

* Device mounted on FR-4 PCB 36mm 

×

 18mm 

×

 1.5mm; mounting pad for the collector lead min 6cm

2

.

V

CEO

Collector-Emitter Voltage

- 100

V

V

CBO

Collector-Base Voltage

- 120

V

V

EBO

Emitter-Base Voltage

- 5.0

V

I

C

Collector Current

- Continuous

- 4.0

A

T

J

, T

STG

Operating and Storage Junction Temperature Range

- 55 ~ +150

°

C

BV

CEO

Collector-Emitter Breakdown Voltage 

I

C

 = -10mA, I

B

 = 0

-100

V

BV

CBO

Collector-Base Breakdown Voltage 

I

C

 = -100

µ

A, I

E

 = 0

-120

V

BV

EBO

Emitter-Base Breakdown Voltage 

I

E

 = -100

µ

A, I

C

 = 0

-5.0

V

I

CBO

Collector-Base Cutoff Current

V

CB

 = -100V, I

E

 = 0

T

A

 = 100

°

C

-0.1

-10

µ

A

µ

A

I

EBO

Emitter-Base Cutoff Current

V

EB

 = -4V, I

C

 = 0

-0.1

µ

A

h

FE

DC Current Gain 

V

CE

 = -2.0V, I

C

 = -50mA

V

CE

 = -2.0V, I

C

 = -500mA

V

CE

 = -2.0V, I

C

 = -1.0A

70

100

55

300

V

CE

(sat)

Collector-Emitter Saturation Voltage 

I

C

 = -1.0A, I

C

 = -50mA

-0.3

V

V

BE

(sat)

Base-Emitter Saturation Voltage 

I

C

 = -1.0A, I

B

 = -100mA

-1.25

V

V

BE

(on)

Base-Emitter On Voltage

V

CE

 = -2.0V, I

C

 = -1.0A, 

-1.0

V

f

T

Transition Frequency

V

CE

 = -5V, I

C

 = -100mA, f = 100MHz

75

MHz

P

D

Total Device Dissipation
Derate above 25C

1.2
9.7

W

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

103

°

C/W

• This device is designed for power amplifier, regulator and switching 

circuits where speed is important. Sourced from Process 5P.

SOT-223

1

2

4

3

1. Base  2. Collector   3. Emitter