Fairchild Semiconductor N/A KSH3055TF Datenbogen

©2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW

≤

300

µ

s, Duty Cycle

≤

2%

 V

CBO

 Collector-Base Voltage

  70

V

 V

CEO

 Collector-Emitter Voltage

  60

V

 V

EBO

 Emitter-Base Voltage

   5

V

 I

C

 Collector Current

  10

A

 I

B

 Base Current

   6

A

 P

C

 Collector Dissipation (T

C

=25

°

C)

  20

W

 Collector Dissipation (T

a

=25

°

C)

1.75

W

 T

J

 Junction Temperature

 150

°

C

 T

STG

 Storage Temperature

- 55 ~ 150

°

C

 V

CEO

 (sus)

* Collector-Emitter Sustaining Voltage

 I

C 

= 30mA, I

B 

= 0

60

V

 I

CEO

 Collector Cut-off Current

 V

CE 

= 30V, I

E 

= 0

50

µ

A

 I

CBO

 Collector Cut-off Current

 V

CB 

= 70V, I

E 

= 0

 2

mA

 I

EBO

 Emitter Cut-off Current

 V

EB 

= 5V, I

C 

= 0

0.5

mA

 h

FE

*DC Current Gain

 V

CE 

= 4V, I

C 

= 4A

 V

CE 

= 4V, I

C 

= 10A

20

 5

100

 V

CE

(sat)

* Collector-Emitter Saturation Voltage

 I

C 

= 4A, I

B 

= 0.4A

 I

C 

= 10A, I

B 

= 3.3A

1.1

  8

V
V

 V

BE

(on)

* Base-Emitter On Voltage

 V

CE 

= 4V, I

C 

= 4A

1.8

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= 10V, I

C 

= 500mA 

 2

MHz

• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular KSE3055T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product: 

f

T

 = 2MHz (MIN), I

C

 = 500mA

1.Base    2.Collector    3.Emitter

D-PAK

I-PAK

1

1