Fairchild Semiconductor N/A KSP06TA Datenbogen

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

T

a

=25

°

C unless otherwise noted 

T

a

=25

°

C unless otherwise noted 

* Pulse Test: PW

≤

300

µ

s, Duty Cycle

≤

2%

V

CBO

 

Collector Base Voltage

: KSP05
: KSP06

60
80

V
V

V

CEO

Collector-Emitter Voltage

: KSP05
: KSP06

60
80

V
V

V

EBO

Emitter-Base Voltage

4

V

I

C

Collector Current

500

mA

P

C

Collector Power Dissipation

625

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-55~150

°

C

BV

CEO

Collector-Emitter Breakdown Voltage

: KSP05
: KSP06

I

C

=1mA, I

B

=0

60
80

                                 

V                                                                                                                                         
V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

=100

µ

A, I

C

=0

4

V

I

CBO

Collector Cut-off Current

: KSP05
: KSP06

V

CB

=60V, I

E

=0

V

CB

=80V, I

E

=0

0.1
0.1

µ

A

µ

A

I

CEO

Collector Cut-off Current

V

CE

=60V, I

B

=0

0.1

µ

A

h

FE

 

DC Current Gain

V

CE

=1V, I

C

=10mA

V

CE

=1V, I

C

=100mA

50
50

V

CE 

(sat)

Collector-Emitter Saturation Voltage

I

C

=100mA, I

B

=10mA

0.25

V

V

BE 

(on)

Base-Emitter On Voltage

V

CE

=1V, I

C

=100mA

1.2

V

f

T

Current Gain Bandwidth Product

V

CE

=2V, I

C

=10mA

f=100MHz

100 MHz

• Collector-Emitter Voltage: V

CEO

 = KSP05: 60V

KSP06: 80V

• Collector Dissipation: P

C 

(max)=625mW

• Complement to KSP55/56

1. Emitter   2. Base   3. Collector

TO-92

1