Fairchild Semiconductor N/A MJD350TF Datenbogen

©2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW

≤

300

µ

s, Duty Cycle

≤

2%

 V

CBO

 Collector-Base Voltage

 - 300

V

 V

CEO

 Collector-Emitter Voltage

 - 300

V

 V

EBO

 Emitter-Base Voltage

   - 3

V

 I

C

 Collector Current (DC)

 - 0.5

A

 I

CP

 Collector Current (Pulse)

- 0.75

A

 P

C

 Collector Dissipation (T

C

 = 25

°

C)

   15

W

 Collector Dissipation (T

a

 = 25

°

C)

 1.56

W

 T

J

 Junction Temperature

 150

°

C

T

STG

 Storage Temperature

- 65 ~ 150

°

C

 V

CEO

(sus)

* Collector-Emitter Sustaining Voltage

 I

C 

= 1mA, I

B 

= 0

-300

V

 I

CEO

 Collector Cut-off Current

 V

CB 

= -300V, I

E 

=0

-0.1

mA

 I

EBO

 Emitter Cut-off Current

 V

EB 

= -3V, I

C 

= 0

-0.1

mA

 h

FE

* DC Current Gain

 V

CE 

= -10V, I

C 

= -50mA

 30

240

• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)

1.Base    2.Collector    3.Emitter

D-PAK

I-PAK

1

1