Fairchild Semiconductor N/A NZT902 Datenbogen

©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

NZT902 Rev. B

tm

September 2006

• These devices are designed with high current gain and 

 

low saturation voltage with collector currents up to 3A continuous.

 

 
 
 

T

a

=25

°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150

°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

a

=25

°C unless otherwise noted

* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm.

T

a

 = 25°C unless otherwise noted

* Pulse Test: Pulse Width 

≤ 300µs, Duty Cycle ≤ 2.0%

V

CEO

Collector-Emitter Voltage

90

V

V

CBO

Collector-Base Voltage

120

V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current

- Continuous

3

A

T

J

Junction Temperature 

150

°C

T

STG

Storage Temperature Range

- 55 ~ +150

°C

P

D

Total Device Dissipation

1

W

R

θJA

Thermal Resistance, Junction to Ambient

125

°C/W

BV

CEO

Collector-Emitter Breakdown Voltage 

I

C

 = 10mA

90

V

BV

CBO

Collector-Base Breakdown Voltage 

I

C

 = 100

µA              

120

V

BV

EBO

Emitter-Base Breakdown Voltage 

I

E

 = 100

µA

5

V

I

CBO

Collector-Base Cutoff Current

V

CB

 = 100V

V

CB

 = 100V,   Ta = 100 

°C

100

10

nA
uA

I

EBO

Emitter-Base Cutoff Current

V

EB

 = 4V

100

nA

h

FE

DC Current Gain 

I

C

 = 0.1A, V

CE

 = 2V

I

C

 = 1A, V

CE

 = 2V

I

C

 = 2A, V

CE

 = 2V

80
80
25

V

CE(sat)

Collector-Emitter Saturation Voltage 

I

C

 = 0.1A, I

B

 = 5.0mA

I

C

 = 1A, I

B

 = 100mA

I

C

 = 3A, I

B

 = 300mA            

50

250
600

mV
mV
mV

V

BE(sat)

Base-Emitter Saturation Voltage 

I

C

 = 1A, I

B

 = 100mA

1.25

V

C

obo

Output Capacitance

V

CB

 = 10V, I

E

 = 0, f = 1MHz

35

pF

f

T

Transition Frequency

I

C

 = 100mA, V

CE

 = 5V,  f = 100MHz

75

MHz

SOT-223

1

2

4

3

1. Base  2. Collector   3. Emitter