Fairchild Semiconductor N/A KST3904MTF Datenbogen
Produktcode
KST3904MTF
KST3904 —
NPN Epit
a
x
ial Silicon
T
ransis
tor
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KST3904 Rev. A2
1
November 2011
KST3904
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Features
• General Purpose Transistor
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
=25
°C unless otherwise noted
*
Pulse Test: Pulse Width
≤300μs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
40
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current
200
mA
P
C
Collector Power Dissipation
350
mW
T
STG
Storage Temperature Range
-55 to 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=10
μA, I
E
=0
60
V
BV
CEO
* Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0
40
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
μA, I
C
=0
6
V
I
CEX
Collector Cut-off Current
V
CE
=30V, V
EB
=3V
50
nA
h
FE
* DC Current Gain
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
40
70
70
100
60
30
30
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
0.2
0.3
0.3
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
0.65
0.85
0.95
0.95
V
V
V
C
ob
Output Capacitance
V
CB
=5V, I
E
=0, f=1MHz
4
pF
f
T
Current Gain-Bandwidth Product
V
CE
=20V, I
C
=10mA, f=100MHz
300
MHz
NF
Noise Figure
I
C
=100
μA, V
CE
=5V, R
S
=1K
Ω,
f=10Hz to 15.7KHz
5
dB
t
ON
Turn On Time
V
CC
=3V, V
BE
=0.5V,
I
C
=10mA, I
B1
=1mA
70
ns
t
OFF
Turn Off Time
V
CC
=3V, I
C
=10mA,
I
B1
=I
B2
=1mA
250
ns
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
1 A
Marking