Fairchild Semiconductor N/A NZT7053 Datenbogen
Produktcode
NZT7053
2N7052 / 2N7053 / NZT7053
2N7052
NZT7053
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
100
V
V
CBO
Collector-Base Voltage
100
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current - Continuous
1.5
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
C
B
E
TO-92
B
C
C
SOT-223
E
Symbol
Characteristic
Max
Units
2N7052
2N7053
*NZT7053
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
1,000
8.0
1,000
8.0
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case
83.3
125
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
200
50
125
°
C/W
2N7053
TO-226
C
B
E
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
ã
1997 Fairchild Semiconductor Corporation