Fairchild Semiconductor N/A PN200A Datenbogen

This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

TA = 25°C unless otherwise noted

V

CEO

Collector-Emitter Voltage

45

V

V

CBO

Collector-Base Voltage

60

V

V

EBO

Emitter-Base Voltage

6.0

V

I

C

Collector Current - Continuous

500

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

P

D

Total Device Dissipation

Derate above 25

°

C

625

5.0

350

2.8

mW

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

200

357

°

C/W

*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 

1997 Fairchild Semiconductor Corporation