Fairchild Semiconductor N/A NZT660 Datenbogen
Produktcode
NZT660
NZT660 / NZT660A — PNP Low
Saturation T
ransistor
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
NZT660 / NZT660A Rev. 1.1.0
1
January 2014
NZT660 / NZT660A
PNP Low Saturation Transistor
PNP Low Saturation Transistor
Ordering Information
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. Fairchild Semiconductor should be consulted on application involving pulsed or
low-duty cycle operation.
Part Number
Marking
Package
Packing Method
NZT660
660
SOT-223 4L
Tape and Reel
NZT660A
660A
SOT-223 4L
Tape and Reel
Symbol
Parameter
Value
Unit
NZT660
NZT660A
V
CEO
Collector-Emitter Voltage
-60
-60
V
V
CBO
Collector-Base Voltage
-80
-60
V
V
EBO
Emitter-Base Voltage
-5
-5
V
I
C
Collector Current - Continuous
-3
-3
A
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150 -55 to +150
°C
Description
These devices are designed with high-current gain and
low saturation voltage with collector currents up to 3 A
continuous.
low saturation voltage with collector currents up to 3 A
continuous.
SOT-223
1
2
4
3
1. Base 2,4. Collector 3. Emitter