Fairchild Semiconductor N/A NZT660A Datenbogen
Produktcode
NZT660A
NZT660 / NZT660A — PNP Low
Saturation T
ransistor
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
NZT660 / NZT660A Rev. 1.1.0
2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. PCB size: FR-4 76 x 114 x 1.57 mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width
≤ 300 μs, duty cycle ≤ 2.0%.
Symbol
Parameter
Max.
Unit
P
D
Total Device Dissipation
2
W
R
θJA
Thermal Resistance, Junction to Ambient
62.5
°C/W
Symbol
Parameter
Conditions
Min.
Max.
Unit
BV
CEO
Collector-Emitter Breakdown
Voltage
Voltage
I
C
= -10 mA
-60
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
μA
NZT660
-80
V
NZT660A
-60
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -100
μA
-5
V
I
CBO
Collector-Base Cut-Off Current
V
CB
= -30 V
-100
nA
V
CB
= -30 V, T
A
= 100
°C
-10
μA
I
EBO
Emitter-Base Cut-Off Current
V
EB
= -4 V
-100
nA
h
FE
DC Current Gain
(4)
I
C
= -100 mA, V
CE
= -2 V
70
I
C
= -500 mA, V
CE
= -2 V
NZT660
100
300
NZT660A
250
550
I
C
= -1 A, V
CE
= -2 V
80
I
C
= -3 A, V
CE
= -2 V
25
V
CE
(sat)
Collector-Emitter Saturation
Voltage
Voltage
(4)
I
C
= -1 A, I
B
= -100 mV
-300
mV
I
C
= -3 A, I
B
= -300 mV
NZT660
-550
NZT660A
-500
V
BE
(sat) Base-Emitter Saturation Voltage
(4)
I
C
= -1 A, I
B
= -100 mV
-1.25
V
V
BE
(on)
Base-Emitter On Voltage
(4)
I
C
= -1 A, V
CE
= -2 V
-1
V
C
ob
Output Capacitance
V
CB
= -10 V, I
E
= 0, f = 1 MHz
45
pF
f
T
Transition Frequency
I
C
= -100 mA, V
CE
= -5 V,
f = 100 MHz
75
MHz