Fairchild Semiconductor N/A KSP42TA Datenbogen
Produktcode
KSP42TA
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP
42/4
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
Collector Base Voltage
: KSP42
: KSP43
: KSP43
300
200
200
V
V
V
V
CEO
Collector-Emitter Voltage
: KSP42
: KSP43
: KSP43
300
200
200
V
V
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current
500
mA
P
C
Collector Power Dissipation
625
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP42
: KSP43
: KSP43
I
C
=100
µ
A, I
E
=0
300
200
200
V
V
V
BV
CEO
* Collector -Emitter Breakdown Voltage
: KSP42
: KSP43
: KSP43
I
C
=1mA, I
B
=0
300
200
200
V
V
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=100
µ
A, I
C
=0
6
V
I
CBO
Collector Cut-off Current
: KSP42
: KSP43
: KSP43
V
CB
=200V, I
E
=0
V
CB
=160V, I
E
=0
100
100
100
nA
nA
nA
I
EBO
Emitter Cut-off Current
: KSP42
: KSP43
: KSP43
V
BE
=6V, I
C
=0
V
BE
=4V, I
C
=0
100
100
100
nA
nA
nA
h
FE
* DC Current Gain
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
25
40
40
40
40
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
=20mA, I
B
=2mA
0.5
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
=20mA, I
B
=2mA
0.9
V
C
ob
Output Capacitance
: KSP42
: KSP43
: KSP43
V
CB
=20V, I
E
=0
f=1MHz
3
4
4
pF
pF
pF
f
T
Current Gain Bandwidth Product
V
CE
=20V, I
C
=10mA
f=100MHz
50
MHz
KSP42/43
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
=KSP42: 300V
KSP43: 200V
• Collector Power Dissipation: P
C
(max)=625mW
1. Emitter 2. Base 3. Collector
TO-92
1