Fairchild Semiconductor N/A NZT45H8 Datenbogen
Produktcode
NZT45H8
D45H
8 / NZT45H
8 — P
N
P Pow
e
r A
m
m
pl
ifi
e
r
© 1997 Fairchild Semiconductor Corporation
www.fairchildsemi.com
D45H8 / NZT45H8 Rev. 1.1.0
1
March 2014
D45H8 / NZT45H8
PNP Power Amplifier
PNP Power Amplifier
Ordering Information
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150
°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Figure 1. D45H8 Device Package
Figure 2. NZT45H8 Device Package
Part Number
Marking
Package
Packing Method
D45H8
D45H8
TO-220 3L
Rail
NZT45H8
45H8
SOT-223 4L
Tape and Reel
Symbol
Parameter
Value
Unit
V
CEO
Collector-Emitter Voltage
-60
V
I
C
Collector Current - Continuous
-8
mA
T
J,
T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
TO-220
B
C
E
B
C
C
SOT-223
E
Description
This device is designed for power amplifier, regulator,
and switching circuits where speed is important.
Sourced from process 5Q.
and switching circuits where speed is important.
Sourced from process 5Q.