Elixir DDR2 2GB, RAM, SO-DIMM, 667MHz M2N2G64TU8HD5B-3C Benutzerhandbuch
Produktcode
M2N2G64TU8HD5B-3C
M2N1G64TUH8D4F / M2N2G64TU8HD4B / M2N1G64TUH8D5F / M2N2G64TU8HD5B
M2N1G64TUH8D6F / M2N2G64TU8HD6B
1GB: 128M x 64 / 2GB: 256M x 64
Unbuffered DDR2 SO-DIMM
REV 1.1
16
07/2008
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR2 SDRAM Devices Used on Module
(T
CASE
= 0 °C ~ 85 °C; V
DDQ
= 1.8V ± 0.1V; V
DD
= 1.8V ± 0.1V, See AC Characteristics) (Part 2 of 2)
Symbol
Parameter
-3C
-AC
Unit Notes
Min.
Max.
Min.
Max.
t
RRD
Active bank A to Active bank B command
7.5
-
7.5
-
ns
t
CCD
to
2
-
2
-
t
CK
t
WR
Write recovery time
15
-
15
-
ns
WR
Write recovery time with Auto-Precharge
t
WR
/t
CK
t
WR
/t
CK
ns
t
DAL
Auto precharge write recovery + precharge time
WR
+t
+t
RP
-
WR
+t
+t
RP
-
t
CK
t
WTR
Internal write to read command delay
7.5
-
7.5
-
ns
t
RTP
Internal read to precharge command delay
7.5
-
7.5
-
ns
t
XSNR
Exit self refresh to a Non-read command
t
RFC
+10
-
t
RFC
+10
-
ns
t
XSRD
Exit self refresh to a Read command
200
-
200
-
t
CK
t
XP
Exit precharge power down to any Non- read
command
command
2
-
2
-
t
CK
t
XARD
Exit active power down to read command
2
-
2
-
t
CK
t
XARDS
Exit active power down to read command
7-AL
-
8-AL
-
t
CK
t
CKE
CKE minimum pulse width
3
-
3
-
t
CK
t
OIT
OCD drive mode output delay
0
12
0
12
ns
ODT
t
AOND
ODT turn-on delay
2
2
2
2
t
CK
t
AON
ODT turn-on
t
AC(min)
t
AC(max)
+0.7
t
AC(min)
t
AC(max)
+0.7
ns
t
AONPD
ODT turn-on (Power down mode)
t
AC(min)
+2
2t
CK
+
t
AC(max)
+1
t
AC(min)
+2
2t
CK
+
t
AC(max)
+1
ns
t
A
OFD
ODT turn-off delay
2.5
2.5
2.5
2.5
t
CK
t
AOF
ODT turn-off
t
AC(min)
t
AC(max)
+0.6
t
AC(min)
t
AC(max)
+0.6
ns
t
AOFPD
ODT turn-off (Power down mode)
t
AC(min)
+2
2.5t
CK
+
t
AC(max)
+1
t
AC(min)
+2
2.5t
CK
+
t
AC(max)
+1
ns
t
ANPD
ODT to power down entry latency
3
-
3
-
t
CK
t
AXPD
ODT power down exit latency
8
-
8
-
t
CK
Speed Grade Definition
Symbol
Parameter
-3C
-AC
Unit
Min.
Max.
Min.
Max.
t
RAS
Row Active Time
45
70000
45
70000
ns
t
RCD
RAS to CAS delay
15
-
12.5
-
ns
t
RC
Row Cycle Time
60
-
57.5
-
ns
t
RP
Row Precharge Time
15
-
12.5
-
ns