Philips PMST6429 User Manual

1999 Apr 22

3

Philips Semiconductors

Product specification

NPN general purpose transistors

PMST6428; PMST6429

1. Transistor mounted on an FR4 printed-circuit board.

T

amb

≤

25

°

C unless otherwise specified.

1. Pulse test: t

p

≤

300

µ

s;

δ ≤

0.02.

R

th j-a

thermal resistance from junction to ambient

note 1

625

K/W

I

CBO

collector cut-off current

I

E

= 0; V

CB

= 30 V

−

10

nA

I

E

= 0; V

CB

= 30 V;  T

j

= 150

°

C

−

10

µ

A

I

EBO

emitter cut-off current

I

C

= 0; V

EB

= 5 V

−

10

nA

h

FE

DC current gain

V

CE

= 5 V

PMST6428

I

C

= 0.01 mA

250

−

I

C

= 0.1 mA

250

650

I

C

= 1 mA

250

−

I

C

= 10 mA

250

−

DC current gain

V

CE

= 5 V

PMST6429

I

C

= 0.01 mA

500

−

I

C

= 0.1 mA

500

1250

I

C

= 1 mA

500

−

I

C

= 10 mA

500

−

V

CEsat

collector-emitter saturation
voltage

I

C

= 10 mA; I

B

= 0.5 mA; note 1

−

200

mV

I

C

= 100 mA; I

B

= 5 mA; note 1

−

600

mV

V

BE

base-emitter voltage

I

C

= 1 mA; V

CE

= 5 V

560

660

mV

C

c

collector capacitance

I

E

= i

e

= 0; V

CB

= 10 V; f = 1 MHz

−

3

pF

C

e

emitter capacitance

I

C

= i

c

= 0; V

EB

= 0.5 V; f = 1 MHz

−

12

pF

f

T

transition frequency

I

C

= 1 mA; V

CE

= 5 V; f = 100 MHz

100

700

MHz