Kingston Technology KVR1333D3S9/2GBK, 2GB, 1333 MHz, DDR3, Non-ECC, CL9, SODIMM, Bulk 50-Pack KVR1333D3S9/2GBK Leaflet

Document No. VALUERAM0802-001.A00

06/11/09

Page 1

This document describes ValueRAM's 256M x 64-bit (2GB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM)
memory module, based on sixteen 128M x 8-bit DDR3-1333MHz FBGA components. The SPD is programmed to JEDEC
standard latency 1333MHz timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold contact fingers and requires
+1.5V. The electrical and mechanical specifications are as follows:

JEDEC standard 1.5V ± 0.075V Power Supply

VDDQ = 1.5V ± 0.075V

667MHz fCK for 1333Mb/sec/pin

8 independent internal bank

Programmable CAS Latency: 5,6,7,8,9,10

Posted CAS

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 7(DDR3-1333)

8-bit pre-fetch

Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4

which does not allow seamless read or write [either on the fly using A12 or MRS]

Bi-directional Differential Data Strobe

Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C

Asynchronous Reset

PCB : Height 1.180” (30.00mm), double  sided  component

CL(IDD)

9 cycles

Row Cycle Time (tRCmin)

49.5ns (min.)

Refresh to Active/Refresh Command Time (tRFCmin)

110ns

Row Active Time (tRASmin)

36ns (min.)

Power

1.200 W (operating)

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C