Kingston Technology 4GB DDR3 240-pin DIMM KVR1066D3Q8R7S/4GHT Data Sheet
Product codes
KVR1066D3Q8R7S/4GHT
Memory Module Specifications
KVR1066D3Q8R7S/4GHT
4GB 512M x 72-Bit PC3-8500
CL7 Registered w/Parity 240-Pin DIMM
CL7 Registered w/Parity 240-Pin DIMM
Kingston.com
Document No. VALUERAM0912-001.A00 05/10/10 Page 1
DESCRIPTION
This document describes ValueRAM’s 512M x 72-bit (4GB)
DDR3-1066MHz CL7 SDRAM (Synchronous DRAM) registered
w/parity, quad-rank memory module, based on thirty-six 128M
x 8-bit SDRAMs. The SPD is programmed to JEDEC standard
latency 1066MHz timing of 7-7-7 at 1.5V. This 240-pin DIMM
uses gold contact fingers and requires +1.5V. The electrical and
mechanical specifications are as follows:
DDR3-1066MHz CL7 SDRAM (Synchronous DRAM) registered
w/parity, quad-rank memory module, based on thirty-six 128M
x 8-bit SDRAMs. The SPD is programmed to JEDEC standard
latency 1066MHz timing of 7-7-7 at 1.5V. This 240-pin DIMM
uses gold contact fingers and requires +1.5V. The electrical and
mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12
or MRS]
not allow seamless read or write [either on the fly using A12
or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
• PCB : Height 1.180” (30.00mm), double sided component
DRAM Supported: Hynix T-Die
SPECIFICATIONS
CL(IDD)
7 cycles
Row Cycle Time (tRCmin)
50.63ns (min.)
Refresh to Active/Refresh
110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
37.5ns (min.)
Power
2.625 W (operating)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
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