Epson S1C33L03 User Manual
APPENDIX A <REFERENCE> EXTERNAL DEVICE INTERFACE TIMINGS
A-114
EPSON
S1C33L03 PRODUCT PART
A.1
DRAM (70ns)
DRAM interface setup examples – 70ns
Operating
frequency
frequency
RAS precharge
cycle
RAS cycle
CAS cycle
Refresh RAS pulse
width
Refresh RPC delay
20MHz
2
1
2
2
1
25MHz
2
1
2
2
1
33MHz
2
2
3
3
1
DRAM interface timing – 70ns
DRAM interface
Unit: ns
33MHz
25MHz
20MHz
Parameter
Symbol
Min.
Max.
Cycle
Time
Cycle
Time
Cycle
Time
<Common parameters>
Random read/random write cycle time
t
RC
130
–
7
210
5
200
5
250
#RAS precharge time
t
RP
50
–
2
60
2
80
2
100
#RAS pulse width
t
RAS
70
10000
5
150
3
120
3
150
#CAS pulse width
t
CAS
20
10000
2.5
75
1.5
60
1.5
75
Row address setup time
t
ASR
0
–
0.5
15
0.5
20
0.5
25
Row address hold time
t
RAH
10
–
1.5
45
0.5
20
0.5
25
Column address setup time
t
ASC
0
–
0.5
15
0.5
20
0.5
25
#RAS
→
#CAS delay time
t
RCD
20
–
2.0
60
1.0
40
1.0
50
#RAS
→
column address delay time
t
RAD
15
–
1.5
45
0.5
20
0.5
25
<Read-cycle parameters>
#RAS access time
t
RAC
–
70
4.5
135
2.5
100
2.5
125
#CAS access time
t
CAC
–
20
2.5
75
1.5
60
1.5
75
Address access time
t
AA
–
35
3.0
90
2.0
80
2.0
100
#OE access time
t
OAC
–
20
4.5
135
2.5
100
2.5
125
Output buffer turn-off time
t
OFF
0
20
2
60
2
80
2
100
<Write-cycle parameters>
Data input hold time
t
DH
15
–
2.5
75
1.5
60
1.5
75
<Fast-page mode>
Fast-page mode cycle time
t
PC
45
–
3.0
90
2.0
80
2.0
100
Fast-page mode #CAS precharge time
t
CP
10
–
0.5
15
0.5
20
0.5
25
Access time after #CAS precharge
t
ACP
–
40
3.0
90
2.0
80
2.0
100
<Refresh cycle>
#CAS setup time
t
CSR
10
–
1.0
30
1.0
40
1.0
50
#CAS hold time
t
CHR
10
–
2.5
75
1.5
60
1.5
75
#RAS precharge
→
#CAS hold time
t
PPC
10
–
1.0
30
1.0
40
1.0
50
#RAS pulse width (only in refresh cycle)
t
RAS
70
10000
3.0
90
2.0
80
2.0
100