Panasonic MA22D17 Leaflet

Page of 2
Schottky Barrier Diodes (SBD) 
Publication date: December 2004 
SKH00140AED 
1
MA22D17
Silicon epitaxial planar type
For high frequency rectifi cation
 Features
 Reverse voltage V
R
 Reverse voltage V
 Reverse voltage V  = 100 V is guaranteed
R
R
 High non-repetitive peak forward surge current: I
FSM
 = 20 A
FSM
FSM
 Absolute Maximum Ratings  
T
a
 = 25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
100
V
Repetitive peak reverse voltage
V
RRM
V
V
100
V
Forward current (Average) 
*1
I
F(AV)
300
mA
Non-repetitive peak forward surge current 
*2
I
FSM
20
A
Junction temperature
T
j
TT
125
°
C
Storage temperature
T
stg
TT
–55 to +125
°
C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics  
T
a
 = 25
aa
°
C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
V
I
F
 = 300 mA
0.49
0.57
V
Reverse current
I
R
V
R
 = 100 V
R
R
70
200
µ
A
Terminal capacitance
C
t
V
R
 = 0 V, f = 1 MHz
R
R
100
pF
Reverse recovery time 
*
t
rr
tt
I
F
 = I
R
 = 100 mA, I
R
R
rr
 = 10 mA, 
rrrr
R
L
R
R  = 100 
LL
Ω
7
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
 
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage 
of current from the operating equipment.
 
3. *: t
rr
 measurement circuit
rr
rr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
50 Ω
t
p
tt = 2 µs
t
r
0.35 ns
δ = 
0.05
I
F
I
R
100 mA
R
L
100 Ω
10%
Input Pulse
Output Pulse
I
rr
10 mA
t
r
t
p
tt
t
rr
V
R
I
F
t
t
A
A
Unit: mm
1:  Anode
2:  Cathode 
Mini2-F1 Package
1.6
±
0.1
1
2
0.80
±
0.05
0.55
±
0.1
0.16
+0.1
–0.06
3.
5
±0.
1
2.
6
±0.
1
0.45
±
0.1
0 to 0.1
0 to 0.
3
0 to 0.
1
This product complies with the RoHS Directive (EU 2002/95/EC).