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Panasonic MA26P02 Leaflet

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Publication date: May 2005 
SKL00019AED 
1
PIN diodes 
MA26P02
Silicon epitaxial planar type
For high frequency switch
 Features
 Small terminal capacitance C
t
 Low forward dynamic resistance r
f
 Low forward dynamic resistance r
 Low forward dynamic resistance r
 Miniature package and surface mounting type
 Absolute Maximum Ratings  
T
a
 = 25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
60
V
Forward current
I
F
100
mA
Junction temperature
T
j
TT
150
°
C
Storage temperature
T
stg
TT
–55 to +150
°
C
 Electrical Characteristics  
T
a
 = 25
aa
°
C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
V
I
F
 = 10 mA
1.0
V
Reverse current
I
R
V
R
 = 60 V
R
R
100
nA
Terminal capacitance
C
t
V
R
 = 1 V, f = 1 MHz
R
R
0.5
pF
Forward dynamic resistance
r
f
rr
I
F
 = 10 mA, f = 100 MHz
2.0
Ω
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Marking Symbol: P2
Unit: mm
1: Anode
2: Cathode 
ML-2-N1 Package
0.60
±0.05
1.00
±0.05
1
2
0.39
+0.01
−
0.03
0.25
±0.05
0.25
±0.05
0.50
±0.05
0.65
±0.01
1
0.05
±0.03
0.05
±0.03
2
0.01
±0.005
This product complies with the RoHS Directive (EU 2002/95/EC).