Panasonic MA2J111 (MA111) User Manual

Switching Diodes

1

Publication date: March 2004

SKF00011BED

Note) *: t = 1 s

(MA111)

Silicon epitaxial planar type

For switching circuits

■ Features

• Allowing high-density mounting
• Short reverse recovery time t

rr

• Small terminal capacitance C

t

• High breakdown voltage: V

R

 

= 80 V

■ Absolute Maximum Ratings  T

a

 

= 25°C

Unit: mm

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

80

V

Maximum peak reverse voltage

V

RM

80

V

Forward current

I

F

100

mA

Peak forward current

I

FM

225

mA

Non-repetitive peak  forward

I

FSM

500

mA

surge current 

*

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

= 100 mA

0.95

1.20

V

Reverse voltage

V

R

I

R

 

= 100 µA

80

V

Reverse current

I

R

V

R

 

= 75 V

100

nA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

0.6

1.2

pF

Reverse recovery time 

*

t

rr

I

F

 

= 10 mA, V

R

 

= 6 V

3

ns

I

rr

 

= 0.1 I

R 

, R

L

 

= 100 Ω

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Marking Symbol: 1B

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

 = 50 Ω

Wave Form Analyzer
(SAS-8130)
R

i

 = 50 Ω

t

p

 = 2 µs

t

r

 = 0.35 ns

δ = 0.05

I

F

 = 10 mA

V

R

 = 6 V

R

L

 = 100 Ω

10%

Input Pulse

Output Pulse

I

rr

 = 0.1 I

R

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 100 MHz.

3. *: t

rr

 measurement circuit

Note) The part number in the parenthesis shows conventional part number.

1: Anode
2: Cathode
EIAJ: SC-76

SMini2-F1 Package

5˚

5˚

1.25

±0.1

0.7

±0.1

2.5

±

0.2

1.7

±

0.1

0.4

±

0.1

0 to 0.1

(0.15)

0.16

0.5

±0.1

1

2

+0.1

–0.06

0.35

±0.1

0 to 0.1

This product complies with the RoHS Directive (EU 2002/95/EC).