Panasonic MA2J115 (MA115) User Manual

Rectifier Diodes

1

Publication date: March 2004

SKC00002BED

(MA115)

Silicon epitaxial planar type

For small power current rectification

■ Features

• S-mini type package, allowing high-density mounting
• High reverse voltage V

R

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

= 200 mA

1.2

V

Reverse current

I

R

V

R

 

= 200 V

200

nA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

4.5

pF

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

200

V

Maximum peak reverse voltage

V

RM

200

V

Output current

I

O

200

mA

Repetitive peak forward current

I

FRM

600

µA

Non-repetitive peak forward

I

FSM

1

A

surge current 

*

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Note) *: t 

= l s

Marking Symbol: 1F

Note) The part number in the parenthesis shows conventional part number.

5˚

5˚

1.25

±0.1

0.7

±0.1

2.5

±

0.2

1.7

±

0.1

0.4

±

0.1

0 to 0.1

(0.15)

0.16

0.5

±0.1

1

2

+0.1

–0.06

0.35

±0.1

0 to 0.1

Unit: mm

1: Anode
2: Cathode
EIAJ: SC-76

SMini2-F1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 3 MHz.

This product complies with the RoHS Directive (EU 2002/95/EC).