Panasonic 2SD1821G User Manual
Transistors
1
Publication date: May 2007
SJC00374AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821G
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment and
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
packing.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
h
FE
130 to 220
185 to 330
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
185
V
Collector-emitter voltage (Base open)
V
CEO
185
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
50
mA
Peak collector current
I
CP
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 100 µA, I
B
= 0
185
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 100 V, I
E
= 0
1
µA
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 10 mA
130
330
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA
1
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2.3
pF
(Common base, input open circuited)
Noise voltage
NV
V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
150
mV
R
g
= 100 k
Ω, Function = FLAT
■ Package
• Code
SMini3-F2
• Marking Symbol: L
• Pin Name
• Pin Name
1: Base
2: Emitter
3: Collector
2: Emitter
3: Collector