Panasonic MA2J1120G User Manual

Switching Diodes

1

Publication date: October 2007

SKF00073AED

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon epitaxial planar type

For switching circuits

■ Features

• Allowing high-density mounting
• Ensuring the forward current  (Average) capacity I

F(AV)

 

= 200 mA

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

40

V

Maximum peak reverse voltage

V

RM

40

V

Forward current (Average) 

*1

I

F(AV)

200

mA

Peak forward current

I

FM

600

mA

Non-repetitive peak forward

I

FSM

1

A

surge current 

*2

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

= 200 mA

1.1

V

Reverse current

I

R1

V

R

 

= 15 V

50

nA

I

R2

V

R

 

= 35 V

500

I

R3

V

R

 

= 35 V, T

a

 

= 100°C

100

µA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

4

pF

Reverse recovery time 

*

t

rr

I

F

 

= 10 mA, V

R

 

= 6 V

10

ns

I

rr

 

= 0.1 I

R 

, R

L

 

= 100 Ω

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

 = 50 Ω

Wave Form Analyzer
(SAS-8130)
R

i

 = 50 Ω

t

p

 = 2 µs

t

r

 = 0.35 ns

δ = 0.05

I

F

 = 10 mA

V

R

 = 6 V

R

L

 = 100 Ω

10%

Input Pulse

Output Pulse

I

rr

 = 0.1 I

R

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 100 MHz.

3. *: t

rr

 measurement circuit

Note) *1: With a printed-circuit board

*2: t 

= 1 s

■ Package

• Code

SMini2-F3

• Pin Name

1: Anode
2: Cathode

■ Marking Symbol: 1C