Panasonic MA4X159A User Manual

Page of 3
Switching Diodes
1
Publication date:  March 2004
SKF00043BED
MA4X159A 
(MA159A)
Silicon epitaxial planar type
For switching circuits
Features
Two isolated elements contained in one package, allowing high-
density mounting
Short reverse recovery time t
rr
Small terminal capacitance C
t
Absolute Maximum Ratings  
T
a
 
=
 25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
Single
I
F
100
mA
Double
75
Peak forward
Single
I
FM
225
mA
current
Double
170
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current 
*
Double
375
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to 
+
150
°
C
Internal Connection
Note) *: t 
=
 1 s
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
 
= 100 mA
0.95
1.20
V
Reverse voltage
V
R
I
R
 
= 100 
µ
A
80
V
Reverse current
I
R
V
R
 
= 75 V
100
nA
Terminal capacitance
C
t
V
R
 
= 0 V, f
 
= 1 MHz
0.9
2.0
pF
Reverse recovery time 
*
t
rr
I
F
 
= 10 mA, V
R
 
= 6 V
3
ns
I
rr
 
= 0.1 I
R
, R
L
 
= 100 
Ω
Electrical Characteristics
  T
a
 
=
 25
°
±
 3
°
C
4
1
3
2
Marking Symbol: M1B
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
 
50 
Ω
Wave Form Analyzer
(SAS-8130)
R
i
 
50 
Ω
t
p
 
µ
s
t
r
 
0.35 ns
δ = 
0.05
I
F
 
10 mA
V
R
 
6 V
R
L
 
100 
Ω
10%
Input Pulse
Output Pulse
I
rr
 
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
 measurement circuit
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1.50
+0.25 –0.05
2.8
+0.2 –0.3
1.9
±
0.2
(0.65)
(0.2)
(0.95)
(0.95)
0 to 0.1
3
4
2
1
0.5R
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
EIAJ: SC-61
Mini4-G1 Package
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).