Panasonic MA3D750(MA7D50) User Manual

Schottky Barrier Diodes (SBD)

1

Publication date: April 2004

SKH00043BED

(MA7D50)

(MA7D50A)

Silicon epitaxial planar type (cathode common)

For switching mode power supply

■ Features

• Low forward voltage V

F

• High dielectric breakdown voltage: > 5 kV

• Easy-to-mount, due to its V cut lead end

■ Absolute Maximum Ratings  T

C

 = 25°C

Parameter

Symbol

Rating

Unit

Repetitive peak

MA3D750

V

RRM

40

V

reverse-voltage

MA3D750A

45

Forward current (Average)

I

F(AV)

10

A

Non-repetitive peak forward

I

FSM

120

A

surge current 

*

Junction temperature

T

j

−40 to +125

°C

Storage temperature

T

stg

−40 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

= 5 A, T

C

 

= 25°C

0.55

V

Reverse current

MA3D750

I

R

V

R

 

= 40 V, T

C

 

= 25°C

3

mA

MA3D750A

V

R

 

= 45 V, T

C

 

= 25°C

3

Thermal resistance (j-c)

R

th(j-c)

3.0

°C/W

■ Electrical Characteristics  T

C

 = 25°C ± 3°C

Unit: mm

1.4

±0.2

1.6

±0.2

0.8

±0.1

0.55

±0.15

2.54

±0.30

5.08

±0.50

1

2

3

2.6

±0.1

2.9

±0.2

4.6

±0.2

φ 3.2

±0.1

3.0

±

0.5

9.9

±0.3

15.0

±

0.5

13.7

±

0.2

4.2

±

0.2

Solder Dip

Note) *: Half sine wave; 10 ms/cycle

Note) The part numbers in the parenthesis show conventional part number.

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 150 MHz.

1: Anode
2: Cathode

 (Common)

3: Anode

TO-220D-A1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).