Panasonic 2SC3931 User Manual
1
Transistors
Publication date: March 2003
SJC00142BED
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
15
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µA, I
E
= 0
30
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
3
V
Base-emitter voltage
V
BE
V
CB
= 6 V, I
E
= −1 mA
720
mV
Forward current transfer ratio
*
h
FE
V
CB
= 6 V, I
E
= −1 mA
65
260
Transition frequency
f
T
V
CB
= 6 V, I
E
= −1 mA, f = 200 MHz
450
650
MHz
Common-emitter reverse transfer
C
re
V
CB
= 6 V, I
E
= −1 mA, f = 10.7 MHz
0.8
1.0
pF
capacitance
Power gain
G
P
V
CB
= 6 V, I
E
= −1 mA, f = 100 MHz
24
dB
Noise figure
NF
V
CB
= 6 V, I
E
= −1 mA, f = 100 MHz
3.3
dB
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2.1
±
0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3:Collector
2: Emitter
3:Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: U
Rank
C
D
h
FE
65 to 160
100 to 260
This product complies with the RoHS Directive (EU 2002/95/EC).