Panasonic MA2SE01 User Manual

Schottky Barrier Diodes (SBD)

1

Publication date: April 2003

SKH00030BED

Silicon epitaxial planar type

For mixer

■ Features

• High-frequency wave detection is possible
• Low forward voltage V

F

• Small terminal capacitance C

t

• SS-Mini type 2-pin package

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

20

V

Maximum peak reverse voltage

V

RM

20

V

Forward current

I

F

35

mA

Peak forward current

I

FM

100

mA

Junction temperature

T

j

125

°C

Storage temperature

T

stg

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F1

I

F

 

= 1 mA

0.41

V

V

F2

I

F

 

= 35 mA

1.0

V

Reverse current

I

R

V

R

 

= 15 V

200

nA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

1.2

pF

Forward dynamic resistance

r

f

I

F

 

= 5 mA

40

Ω

■ Electrical Characteristics  T

a

 

=

 

25

°C ±

 

3

°C

Marking Symbol: 4L

1: Anode
2: Cathode
EIAJ: SC-79

SSMini2-F1 Package

Unit: mm

0.80

+0.05

–0.03

0.60

+0.05

–0.03

0.12

+0.05

–0.02

1.20

+0.05 –0.03

0

+0

–0.05

0.30

±0.05

0.01

±0.01

1.60

±

0.05

0.01

±

0.01

1

2

0.80

±

0.05

(0.80)

(0.60)

(0.15)

(0.60)

5˚

5˚

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Rated input/output frequency: 2 GHz

This product complies with the RoHS Directive (EU 2002/95/EC).