Panasonic 2SC3937G User Manual

Page of 4
Transistors
1
Publication date: April 2007
SJC00363AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3937G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S
21e
2
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings  T
a
 
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
 
= 15 V, I
E
 
=  0
1
µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
 
= 1 V, I
C
 
=  0
1
µA
Forward current transfer ratio
h
FE1
V
CE
 
= 8 V, I
C
 
= 20 mA
50
300
h
FE2
V
CE
 
= 1 V, I
C
 
= 3 mA
80
280
Transition frequency
f
T
V
CE
 
= 8 V, I
C
 
= 20 mA, f = 0.8 GHz
6
GHz
Collector output capacitance
C
ob
V
CB
 
= 10 V, I
E
 
= 0, f = 1 MHz
0.7
1.2
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
V
CE
 
= 8 V, I
C
 
= 20 mA, f = 0.8 GHz
13
dB
Maximum unilateral power gain
G
UM
V
CE
 
= 8 V, I
C
 
= 20 mA, f = 0.8 GHz
14
dB
Noise figure
NF
V
CE
 
= 8 V, I
C
 
= 7 mA, f = 0.8 GHz
1.0
1.7
dB
■ Electrical Characteristics  T
a
 
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
■ Package
• Code
SMini3-F2
• Marking Symbol: 2W
• Pin Name
1. Base
2. Emitter
3. Collector