Panasonic 2SC3936G User Manual

1

Transistors

Publication date: April 2007

SJC00362AED

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon NPN epitaxial planar type

For high-frequency amplification

■ Features

• Optimum for RF amplification, oscillation, mixing, and IF of

FM/AM radios

• S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

30

V

Collector-emitter voltage (Base open)

V

CEO

20

V

Emitter-base voltage (Collector open)

V

EBO

5

V

Collector current

I

C

30

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= 10 µA, I

E

 

=  0

30

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= 2 mA, I

B

 

=  0

20

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= 10 µA, I

C

 

=  0

5

V

Forward current transfer ratio 

*

h

FE

V

CE

 

= 10 V, I

C

 

= 1 mA

70

250



Transition frequency

f

T

V

CB

 

= 10 V, I

E

 

= −1 mA, f = 200 MHz

150

230

MHz

Reverse transfer capacitance

C

re

V

CB

 

= 10 V, I

E

 

= −1 mA, f = 10.7 MHz

1.3

pF

(Common emitter)

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Rank

B

C

h

FE

70 to 160

110 to 250

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

■ Package

• Code

SMini3-F2

• Marking Symbol: K
• Pin Name

1. Base
2. Emitter
3. Collector