Panasonic MA4X746 (MA746) User Manual

Schottky Barrier Diodes (SBD)

1

Publication date: April 2004

SKH00107BED

(MA746)

Silicon epitaxial planar type

For super high speed switching
For small current rectification

■ Features

• Two isolated elements are contained in one package, allowing

high-density mounting

• Forward current (Average) I

F(AV)

 

= 200 mA and Reverse voltage

V

R

 

< 50 V are achieved

• Optimum for high frequency rectification because of its short

reverse recovery time t

rr

• Low forward voltage V

F

 and good rectification efficiency

■ Absolute Maximum Ratings  T

a

 = 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F1

I

F

 

= 30 mA

0.36

V

V

F2

I

F

 

= 200 mA

0.55

Reverse current

I

R

V

R

 

= 50 V

200

µA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

30

pF

Reverse recovery time 

*

t

rr

I

F

 

= I

R

 

= 100 mA

3.0

ns

I

rr

 

= 10 mA, R

L

 

= 100 Ω

■ Electrical Characteristics  T

a

 = 25°C ± 3°C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

50

V

Repetitive peak reverse voltage

V

RRM

50

V

Non-repetitive peak

Single

I

FSM

1

A

forward surge current

Double 

*

0.75

Peak forward

Single

I

FM

300

mA

current

Double 

*

225

Forward current

Single

I

F(AV)

200

mA

(Average)

Double 

*

150

Junction temperature

T

j

125

°C

Storage temperature

T

stg

−55 to +125

°C

Marking Symbol: M3M

Internal Connection

4

3

2

1

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

 = 50 Ω

Wave Form Analyzer
(SAS-8130)
R

i

 = 50 Ω

t

p

 = 2 µs

t

r

 = 0.35 ns

δ = 0.05

I

F

 

= 100 mA

I

R

 

= 100 mA

R

L

 

= 100 Ω

10%

Input Pulse

Output Pulse

I

rr

 

= 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

Unit: mm

1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1

EIAJ : SC-61

Mini4-G1 Package

2.90

+0.02

–0.05

0.16

+0.1

–0.06

0.4

±

0.2

5˚

10˚

0.60

+0.10

–0.05

1.1

+0.2 –0.1

1.1

+0.3 –0.1

1.50

+0.25 –0.05

2.8

+0.2 –0.3

1.9

±0.2

(0.65)

(0.2)

(0.95)

(0.95)

0 to 0.1

3

4

2

1

0.5R

Note) *: Value of each diode in double diodes used.

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 1 GHz.
4. *: t

rr

 measurement circuit

Note) The part number in the parenthesis shows conventional part number.

This product complies with the RoHS Directive (EU 2002/95/EC).