Panasonic 2SD0601A User Manual

Transistors

1

Publication date: April 2003

SJC00190BED

(2SD601A)

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SB0709A (2SB709A)

■ Features

• High foward current transfer ratio h

FE

• Low collector to emitter saturation voltage V

CE(sat)

• Mini type package, allowing downsizing of the equipment and
  automatic insertion through the tape packing and the magazine
  packing.

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

60

V

Collector-emitter voltage (Base open)

V

CEO

50

V

Emitter-base voltage (Collector open)

V

EBO

7

V

Collector current

I

C

100

mA

Peak collector current

I

CP

200

mA

Collector power dissipation

P

C

200

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= 10 µA, I

E

 

=  0

60

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= 2 mA, I

B

 

=  0

50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= 10 µA, I

C

 

=  0

7

V

Collector-base cut-off current (Emitter open)

I

CBO

V

CB

 

= 20 V, I

E

 

= 0

0.1

µA

I

CEO

V

CE

 

= 10 V, I

B

= 0

100

µA

Forward current transfer ratio

h

FE1

 

*

V

CE

 

= 10 V, I

C

 

= 2 mA

160

460



h

FE2

V

CE

 

= 2 V, I

C

 

= 100 mA

90

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

= 100 mA, I

B

 

= 10 mA

0.1

0.3

V

Transition frequency

f

T

V

CB

 

= 10 V, I

E

 

= −2 mA, f = 200 MHz

150

MHz

Noise voltage

NV

V

CE

 

= 10 V, I

C

 

= 1 mA, G

V

 

= 80 dB

110

mV

R

g

 

= 100 kΩ, Function = FLAT

Collector output capacitance

C

ob

V

CB

 

= 10 V, I

E

 

= 0, f = 1 MHz

3.5

pF

 (Common base, input open circuited)

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Unit: mm

1: Base
2: Emitter
3: Collector

Mini3-G1 Package

Marking Symbol: Z

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Note) The part number in the parenthesis shows conventional part number.

Rank

Q

R

S

No-rank

h

FE1

160 to 260

210 to 340

290 to 460

160 to 460

Marking symbol

ZQ

ZR

ZS

Z

0.40

+0.10

–0.05

(0.65)

1.50

+0.25 –0.05

2.8

+0.2 –0.3

2

1

3

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±

0.2

5˚

10˚

0 to 0.1

1.1

+0.2 –0.1

1.1

+0.3 –0.1

Product of no-rank is not classified and have no marking symbol for rank.

This product complies with the RoHS Directive (EU 2002/95/EC).