Panasonic 2SC4562G User Manual
Transistors
1
Publication date: Ma
y 2007 SJC00366AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4562G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1748G
■ Features
• High transition frequency f
T
• Small collector output capacitance (Common base, input open cir-
cuited) C
ob
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µA, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0
100
µA
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 2 mA
200
500
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
0.06
0.30
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz
250
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
1.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
h
FE
200 to 400
250 to 500
■ Package
• Code
SMini3-F2
• Marking Symbol: AM
• Pin Name
• Pin Name
1: Base
2: Emitter
3: Collector
2: Emitter
3: Collector