Panasonic MAS3132EG User Manual

Switching Diodes

1

Publication date: October 2007

SKF00090AED

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon epitaxial planar type

For high-speed switching circuits

■ Features

• Two elements are contained in one package, allowing high-

density mounting

• Short reverse recovery time t

rr

• Small terminal capacitance C

t

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

80

V

Maximum peak reverse voltage

V

RM

80

V

Forward current

Single

I

F

100

mA

Double

150

Peak forward current

Single

I

FM

225

mA

Double

340

Non-repetitive peak

Single

I

FSM

500

mA

forward surge current 

*

Double

750

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

= 100 mA

1.2

V

Reverse voltage

V

R

I

R

 

= 100 µA

80

V

Reverse current

I

R

V

R

 

= 75 V

100

nA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

2

pF

Reverse recovery time 

*

t

rr

I

F

 

= 10 mA, V

R

 

= 6 V

3

ns

I

rr

 

= 0.1 I

R

 , R

L

 

= 100 Ω

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Bias Application Unit N-50BU

90%

Pulse Generator
(PG-10N)
R

s

 = 50 Ω

Wave Form Analyzer
(SAS-8130)
R

i

 = 50 Ω

t

p

 = 2 µs

t

r

 = 0.35 ns

δ = 0.05

I

F

 

= 10 mA

V

R

 

= 6 V

R

L

 

= 100 Ω

10%

Input Pulse

Output Pulse

I

rr

 

= 0.1 I

R

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) *: t 

= 1 s

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.

2. Absolute frequency of input and output is 100 MHz.

3. *: t

rr

 measurement circuit

1

2

3

■ Package

• Code

SSSMini3-F2

• Pin Name

1: Anode 1
2: Anode 2
3: Cathode 1, 2

■ Marking Symbol: MU

■ Internal Connection