Panasonic MAZC062D User Manual
ESD Diodes
1
Publication date: March 2004
SKE00009CED
Note) *: P
tot
= 200 mW achieved with a printed circuit board.
MAZC062D
Silicon planar type
For surge absorption circuit
■ Features
• Low joint capacity zener diode
• Two elements anode-common type
• Two elements anode-common type
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
200
mA
Power dissipation
*
P
D
200
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
1: Cathode 1
2: Cathode 2
3: Anode
2: Cathode 2
3: Anode
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 10 mA
0.9
1.0
V
Zener voltage
*
V
Z
I
Z
= 5 mA
5.9
6.5
V
Zener rise operating resistance
R
ZK
I
Z
= 0.5 mA
100
Ω
Zener operating resistance
R
Z
I
Z
= 5 mA
30
Ω
Reverse current
I
R
V
R
= 5.5 V
3
µA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
8
pF
■ Electrical Characteristics T
a
= 25°C
± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz
3. Electrostatic breakdown voltage:
±15 kV
Test method: IEC-801 (C = 150 pF, R = 330
Ω, Contact discharge: 10 times)
Test unit: ESS-200AX
4. *: The V
Z
value is for the temperature of 25
°C. In other cases, carry out the temperature compensation.
Guaranteed at 20 ms after power application.
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1
2
3
Marking Symbol: 6.2C
This product complies with the RoHS Directive (EU 2002/95/EC).