Panasonic PNZ334 (PN334) User Manual
SHE00042DED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009
1
PIN Photodiodes
PNZ334
(PN334)
Silicon planar type
For optical control systems
Features
Plastic type package (φ5)
High coupling capabillity suitable for plastic fiber
High quantum efficiency
High-speed response
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Power dissipation
P
D
100
mW
Operating ambient temperature
T
opr
–25 to +85
°
C
Storage temperature
T
stg
–30 to +100
°
C
Electrical-Optical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Photocurrent
*1
I
L
V
R
= 10 V, L = 1 000 lx
5.0
7.0
µ
A
Drain current
I
D
V
R
= 10 V
0.1
10
nA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
6
pF
Peak sensitivity wavelength
λ
PD
V
R
= 10 V
850
nm
Half-power angle
θ
The angle when the photocurrent is
halved
halved
70
°
Rise time
*2
t
r
V
R
= 10 V, R
L
= 50 W
2
ns
Fall time
*2
t
f
2
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
50 Ω
λ
P
=
900 nm
t
r
: Rise time
t
f
:
Fall time
Sig. in
R
L
V
R
Sig. out
(Input pulse)
(Output pulse)
10%
90%
t
r
t
f
Note) The part number in the parenthesis shows conventional part number.