Panasonic 2SB1679 Leaflet

Transistors

1

Publication date: February 2003

SJC00097BED

Silicon PNP epitaxial planar type

For low-frequency amplification

■ Features

• Large collector output capacitance (Common base, input open cir-

cuited) C

ob

• Low collector-emitter saturation voltage V

CE(sat)

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

−15

V

Collector-emitter voltage (Base open)

V

CEO

−10

V

Emitter-base voltage (Collector open)

V

EBO

−7

V

Collector current

I

C

− 0.5

A

Peak collector current

I

CP

−1

A

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank

R

S

h

FE1

130 to 220

180 to 350

Marking Symbol: 3V

2.1

±0.1

1.3

±0.1

0.3

+0.1

–0.0

2.0

±0.2

1.25

±0.10

(0.425)

1

3

2

(0.65) (0.65)

0.2

±0.1

0.9

±0.1

0 to 0.1

0.9

+0.2 –0.1

0.15

+0.10

–0.05

5°

10

°

Unit: mm

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

SMini3-G1 Package

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= −10 µA, I

E

 

= 0

−15

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= −1 mA, I

B

 

= 0

−10

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= −10 µA, I

C

 

= 0

−7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

= −10 V, I

E

 

= 0

−100

nA

Forward current transfer ratio 

*1

h

FE1

 

*2

V

CE

 

= −2 V, I

C

 

= − 0.5 A

130

350



h

FE2

V

CE

 

= −2 V, I

C

 

= −1 A

60

Collector-emitter saturation voltage 

*1

V

CE(sat)

I

C

 

= − 0.4 A, I

B

 

= −8 mA

− 0.16 − 0.30

V

Base-emitter saturation voltage 

*1

V

BE(sat)

I

C

 

= − 0.4 A, I

B

 

= −8 mA

− 0.8

−1.2

V

Transition frequency

f

T

V

CB

 

= −10 V, I

E

 

= 50 mA, f = 200 MHz

130

MHz

Collector output capacitance

C

ob

V

CB

 

= −10 V, I

E

 

= 0, f = 1 MHz

22

pF

(Common base, input open circuited)

This product complies with the RoHS Directive (EU 2002/95/EC).