Panasonic 2SA2028 Leaflet

Transistors

1

Publication date: March 2003

SJC00042BED

Silicon PNP epitaxial planar type

For DC-DC converter

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• High-speed switching
• S-Mini type package, allowing downsizing and thinning of the

equipment and automatic insertion through the tape packing

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

−20

V

Collector-emitter voltage (Base open)

V

CEO

−20

V

Emitter-base voltage (Collector open)

V

EBO

−5

V

Collector current

I

C

−1

A

Peak collector current

I

CP

−3

A

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= −10 µA, I

E

 

= 0

−20

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= −1 mA, I

B

 

= 0

−20

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= −10 µA, I

C

 

= 0

−5

V

Forward current transfer ratio

h

FE

V

CE

 = 

−2 V, I

C

 = 

−100 mA

160

560



Collector-emitter saturation voltage

V

CE(sat)

I

C

 

= −200 mA, I

B

 

= −10 mA

−40

−100

mV

Transition frequency

f

T

V

CB

 

= −10 V, I

E

 

= 10 mA, f = 200 MHz

170

MHz

Collector output capacitance

C

ob

V

CB

 

= −10 V, I

E

 

= 0, f = 1 MHz

20

30

pF

(Common base, input open circuited)

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Unit: mm

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

SMini3-G1 Package

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Marking Symbol: AT

2.1

±

0.1

1.3

±0.1

0.3

+0.1

–0.0

2.0

±0.2

1.25

±

0.10

(0.425)

1

3

2

(0.65) (0.65)

0.2

±

0.1

0.9

±

0.1

0 to 0.1

0.9

+0.2 –0.1

0.15

+0.10

–0.05

5˚

10˚

This product complies with the RoHS Directive (EU 2002/95/EC).