Panasonic 2SA1018 User Manual
Transistors
1
Publication date: January 2003
SJC00008BED
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473
■ Features
• High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−250
V
Collector-emitter voltage (Base open)
V
CEO
−200
V
Emitter-base voltage (Collector open)
V
EBO
−5
V
Collector current
I
C
−70
mA
Peak collector current
I
CP
−100
mA
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= −100 µA, I
B
= 0
−200
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −1 µA, I
C
= 0
−5
V
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= −120 V, I
B
= 0
−1
µA
Forward current transfer ratio
*
h
FE
V
CE
=
−10 V, I
C
=
−5 mA
60
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −50 mA, I
B
= −5 mA
−1.5
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz
50
MHz
Collector output capacitance
C
ob
V
CB
=
−10 V, I
E
=0, f
= 1 MHz
10
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
1
2 3
+0.6
–0.2
4.0
±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
1 : Emitter
2 : Collector
3 : Base
2 : Collector
3 : Base
TO-92-B1 Package
Rank
Q
R
h
FE
60 to 150
100 to 220
This product complies with the RoHS Directive (EU 2002/95/EC).