Panasonic 2SD1450 User Manual
Transistors
1
Publication date: April 2003
SJC00222BED
2SD1450
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low collector-emitter saturation voltage V
• Allowing supply with the radial taping
• Low collector-emitter saturation voltage V
CE(sat)
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
12
V
Collector current
I
C
0.5
A
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
300
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µA, I
E
= 0
25
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
20
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
12
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 25 V, I
E
= 0
100
nA
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 2 V, I
C
= 0.5 A
200
800
h
FE2
V
CE
= 2 V, I
C
= 1 A
60
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 500 mA, I
B
= 20 mA
0.13
0.40
V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= 500 mA, I
B
= 20 mA
1.2
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
10
pF
(Common base, input open circuited)
ON resistance
*3
R
on
0.6
Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
4.0
±0.2
0.75 max.
2.0
±0.2
0.45
(2.5) (2.5)
0.7
±0.1
2
3
1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±
0.2
(0.8)
(0.8)
15.6
±
0.5
1: Emitter
2: Collector
3: Base
2: Collector
3: Base
NS-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: R
on
Measurement circuit
Rank
R
S
T
No rank
h
FE1
200 to 350
300 to 500
400 to 800
200 to 800
V
V
1 k
Ω
R
on
= V
B
× 1 000 (Ω)
V
A
− V
B
f
= 1 kHz
V
= 0.3 V
V
B
I
B
= 1 mA
V
A
This product complies with the RoHS Directive (EU 2002/95/EC).