Renesas R5S72621 User Manual

 
Section 25   NAND Flash Memory Controller 

Page 1322 of 2108 

 

R01UH0134EJ0400  Rev. 4.00 

 

 Sep 

24, 

2014 

SH7262 Group, SH7264 Group

This module performs accesses in several independent stages. 

For example, NAND-type flash memory programming consists of the following five stages. 

  First command issue stage (program setup command) 
  Address issue stage (program address) 
  Data stage (output) 
  Second command issue stage (program start command) 
  Status read stage 
 
NAND-type flash memory programming access is achieved by executing these five stages 
sequentially. An access to flash memory is completed at the end of the final stage (status read 
stage). 

First
command

Command/
address

Data input

Program start

ALE

WE

RE

Address

Data

Program

Second
command

H'80

A1

A2

A3

A4

H'10

H'70

Status read

CLE

 

For details on NAND-type flash memory read operation, see section 25.4.4, Command Access 
Mode. 

Two operating modes are supported. 

  Command access mode 
  Sector access mode 
 
The ECC generation and error check are performed in sector access mode.