Kingston Technology 8GB, 1066MHz, DDR3, ECC Reg w/Parity CL7 DIMM Quad Rank, x4 w/Therm Sensor KVR1066D3Q4R7S/8G Data Sheet

Document No. VALUERAM0782-001.A00

05/05/09

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This document describes ValueRAM's 1024M x 72-bit 8GB (8192MB) DDR3-1066 CL7 SDRAM (Synchronous DRAM)
registered w/parity, quad-rank memory module. The module is based on thirty-six 256M x 4-Bit SDRAM internally stacked
in eighteen DDP 512M x 4-Bit DDR3-1066 FBGA packages. The SPD is programmed to JEDEC standard latency 1066Mhz
timing of 7-7-7 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:

JEDEC standard 1.5V ± 0.075V Power Supply

VDDQ = 1.5V ± 0.075V

533MHz fCK for 1066Mb/sec/pin

8 independent internal bank

Programmable CAS Latency: 6,7,8

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 6(DDR3-1066)

8-bit pre-fetch

Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4

which does not allow seamless read or write [either on the fly using A12 or MRS]

Bi-directional Differential Data Strobe

Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

On-DIMM thermal sensor (Grade B)

Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C

Asynchronous Reset

PCB : Height 30.50mm, double  sided  component, w/ Full DIMM Heat Spreader

CL(IDD)

7 cycles

Row Cycle Time (tRCmin)

50.63ns (min.)

Refresh to Active/Refresh Command Time (tRFCmin)

110ns (min.)

Row Active Time (tRASmin)

37.5ns (min.)

Power

6.510 W (operating)

UL Rating

94 V - 0