Elixir M2U25664DS88B3G-5T User Manual

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M2U51264DS8HB3G / M2U25664DS88B3G / M2U12864DSH4B3G 
512MB, 256MB and 128MB  
PC3200, PC2700 and PC2100 
Unbuffered DDR DIMM 
  
 
REV 2.2
 
Aug 3, 2004 
Preliminary
 
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
 
 
184 pin Unbuffered DDR DIMM  
Based on DDR400/333/266 256M bit B Die device
 
 
 
Features
 
• 184 Dual In-Line Memory Module (DIMM) 
• Unbuffered DDR DIMM based on 256M bit die B device, 
organized as either 32Mbx8 or 16Mbx16  
• Performance:
 
 PC3200 
PC2700 
PC2100
Speed Sort 
5T 
6K 
75B 
DIMM CAS Latency 
2.5 
2.5 
Unit
f
CK
 Clock 
Frequency 
200 
166 
133  MHz
t
CK
 Clock 
Cycle 
7.5 
ns
f
DQ
  DQ Burst Frequency 
400 
333 
266 
MHz
• Intended for 133, 166 and 200  MHz applications
 
• Inputs and outputs are SSTL-2 compatible 
• V
DD
 = V
DDQ
 = 2.5V ±
 0.2V  (2.6V ± 0.1V for PC3200) 
• SDRAMs have 4 internal banks for concurrent operation 
• Differential clock inputs 
• Data is read or written on both clock edges 
• DRAM DLL aligns DQ and DQS transitions with clock transitions 
• Address and control signals are fully synchronous to positive 
clock edge 
• Programmable Operation: 
- DIMM CAS Latency: 2, 2.5, 3 
- Burst Type: Sequential or Interleave 
- Burst Length: 2, 4, 8 
- Operation: Burst Read and Write  
• Auto Refresh (CBR) and Self Refresh Modes 
• Automatic and controlled precharge commands 
• 7.8 
µs Max. Average Periodic Refresh Interval 
• Serial Presence Detect EEPROM 
• Gold contacts  
• SDRAMs are packaged in TSOP packages 
 
 
Description    
 
M2U51264DS8HB3G, M2U25664DS88B3G, and M2U12864DSH4B3G are unbuffered 184-Pin Double Data Rate (DDR) Synchronous 
DRAM Dual In-Line Memory Modules (DIMM). M2U51264DS8HB3G is 512MB modules organized as dual ranks using sixteen 32Mx8 
TSOP devices.  M2U25664DS88B3G is 256MB modules organized as single rank using eight 32Mx8 TSOP devices. M2U12864DSH4B3G 
is 128MB modules, organized as single rank using four 16Mx16 TSOP devices. 
 
Depending on the speed grade, these DIMMs are intended for use in applications operating up to 200 MHz clock speeds and achieves 
high-speed data transfer rates of up to 400 MHz. Prior to any access operation, the device CAS latency and burst type/ length/operation 
type must be programmed into the DIMM by address inputs and I/O inputs BA0 and BA1 using the mode register set cycle. 
The DIMM uses a serial EEPROM and through the use of a standard IIC protocol the serial presence-detect implementation (SPD) can be 
accessed. The first 128 bytes of the SPD data are programmed with the module characteristics as defined by JEDEC.