Intel L5238 AT80573JJ0676MT Data Sheet

Product codes
AT80573JJ0676MT
Page of 114
Dual-Core Intel® Xeon® Processor 5200 Series Electrical Specifications
34
Notes:
1.
The V
CC_MIN
 and V
CC_MAX
 loadlines represent static and transient limits. Please se
 for VCC 
overshoot specifications.
2.
 for processor VID information.
3.
 for V
CC
Static and Transient Tolerance
4.
The load lines specify voltage limits at the die measured at the VCC_DIE_SENSE and VSS_DIE_SENSE 
lands and the VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands. Voltage regulation feedback for voltage 
regulator circuits must also be taken from processor VCC_DIE_SENSE and VSS_DIE_SENSE lands and 
VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands. Refer to the Voltage Regulator Module (VRM) and 
Enterprise Voltage Regulator Down (EVRD) 11.0 Design Guidelines for socket load line guidelines and VR 
implementation. Please refer to the appropriate platform design guide for details on VR implementation.
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
V
IL
 is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low 
value.
3.
V
IH
 is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high 
value.
4.
V
IH
 and V
OH
 may experience excursions above V
TT
. However, input signal drivers must comply with the 
signal quality specifications.
5.
This is the pull down driver resistance. Refer to processor I/O Buffer Models for I/V characteristics. 
Measured at 0.31*V
TT
. R
ON
 (min) = 0.158*R
TT
. R
ON
 (typ) = 0.167*R
TT
. R
ON
 (max) = 0.175*R
TT
.
6.
GTLREF should be generated from V
TT
 with a 1% tolerance resistor divider. The V
TT
 referred to in these 
specifications is the instantaneous V
TT
.
7.
Specified when on-die R
TT
 and R
ON
 are turned off. V
IN
 between 0 and V
TT
.
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V
TT
 referred to in these specifications refers to instantaneous V
TT
.
3.
Refer to the processor I/O Buffer Models for I/V characteristics.
4.
Measured at 0.1*V
TT
.
5.
Measured at 0.9*V
TT
.
6.
For Vin between 0 V and V
TT
. Measured when the driver is tristated.
Table 2-14. AGTL+ Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
IL
Input Low Voltage
-0.10
0
GTLREF-0.10
V
2,4,6
V
IH
Input High Voltage
GTLREF+0.10
V
TT
V
TT
+0.10
V
3,6
V
OH
Output High Voltage
V
TT
-0.10
N/A
V
TT
V
4,6
R
ON
Buffer On Resistance
8.25
10.25
12.25
Ω
5
I
LI
Input Leakage Current
N/A
N/A
± 100
μA
7
Table 2-15. CMOS Signal Input/Output Group and TAP Signal Group
DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
IL
Input Low Voltage
-0.10
0.00
0.3 * V
TT
V
2,3
V
IH
Input High Voltage
0.7 * V
TT
V
TT
V
TT
 + 0.1
V
2
V
OL
Output Low Voltage
-0.10
0
0.1 * V
TT
V
2
V
OH
Output High Voltage
0.9 * V
TT
V
TT
V
TT 
+ 0.1
V
2
I
OL
Output Low Current
1.70
N/A
4.70
mA
4
I
OH
Output High Current
1.70
N/A
4.70
mA
5
I
LI
Input Leakage Current
N/A
N/A
± 100
μA
6
Table 2-16. Open Drain Output Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
OL
Output Low Voltage
0
N/A
0.20 * V
TT
V
V
OH
Output High Voltage
0.95 * V
TT
V
TT
1.05 * V
TT
V
3
I
OL
Output Low Current
16
N/A
50
mA
2
I
LO
Leakage Current
N/A
N/A
± 200
μA
4