Intel E1600 HH80557PG056D Data Sheet

Datasheet

81

NOTES:
1.

Intel does not support or recommend operation of the thermal diode under reverse bias.

2.

Same as I

FW 

.

3.

Preliminary data. Will be characterized across a temperature range of 50–80 °C.

4.

Not 100% tested. Specified by design characterization.

5.

The ideality factor, nQ, represents the deviation from ideal transistor model behavior as 
exemplified by the equation for the collector current:

I

C

 = I

S

 * (e 

qV

BE

/n

Q

kT

 –1)

Where I

S

 = saturation current, q = electronic charge, V

BE

 = voltage across the transistor 

base emitter junction (same nodes as VD), k = Boltzmann Constant, and T = absolute 

temperature (Kelvin).

6.

The series resistance, R

T,

 provided in the Diode Model Table (

) can be used for 

more accurate readings as needed. 

The Intel

®

 Celeron

®

 Dual-Core processor E1000 series does not support the diode 

correction offset that exists on other Intel processors.

I

FW

Forward Bias Current

5

—

200

µA

1, 2

I

E

Emitter Current

5

—

200

n

Q

Transistor Ideality

0.997

1.001

1.005

-

3, 4, 5

Beta

0.391

—

0.760

3, 4

R

T

Series Resistance

2.79

4.52

6.24

Ω

3, 6

THERMDA

AL1

diode anode

THERMDC

AK1

diode cathode