Kingston Technology Genesis 8GB (2x4GB) DDR3-1600MHz KHX1600C9S3K2/8GX Data Sheet
Product codes
KHX1600C9S3K2/8GX
DESCRIPTION
Kingston's KHX1600C9S3K2/8GX is a kit of two 512M x 64-bit
(4GB) DDR3-1600MHz CL9 SDRAM (Synchronous DRAM)
2Rx8 memory modules, based on sixteen 256M x 8-bit DDR3
FBGA components per module. Each module kit supports Intel
®
XMP (Extreme Memory Profiles). Total kit capacity is 4GB.
Each module pair has been tested to run at DDR3-1600MHz at
a low latency timing of 9-9-9-27 at 1.5V. The SPDs are pro-
grammed to JEDEC standard latency DDR3-1333MHz timing of
9-9-9 at 1.5V. Each 204-pin SODIMM uses gold contact fingers
and requires +1.5V. The JEDEC standard electrical and
mechanical specifications are as follows:
Document No. 4805876-001.B00 09/30/11 Page 1
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power (Operating)
1.410* (per module)
UL Rating
94 V - 0
Operating Temperature
0
o
C to 85
o
C
Storage Temperature
-55
o
C to +100
o
C
*Power will vary depending on the SDRAM used.
FEATURES
•
JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
•
VDDQ = 1.5V (1.425V ~ 1.575V)
•
667MHz fCK for 1333Mb/sec/pin
•
8 independent internal bank
•
Programmable CAS Latency: 9, 8, 7, 6
•
Posted CAS
•
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
•
8-bit pre-fetch
•
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
•
Bi-directional Differential Data Strobe
•
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
pin (RZQ : 240 ohm ± 1%)
•
On Die Termination using ODT pin
•
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
3.9us at 85°C < TCASE < 95°C
•
Asynchronous Reset
•
PCB : Height 1.180” (30.00mm), double sided component
Memory Module Specifi cations
KHX1600C9S3K2/8GX
8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR3-1600 CL9 204-Pin SODIMM Kit
DDR3-1600 CL9 204-Pin SODIMM Kit
XMP TIMING PARAMETERS:
•
JEDEC: DDR3-1333 CL9-9-9 @1.5V
•
XMP Profile #1: DDR3-1333 CL7-7-7-20 @1.5V
•
XMP Profile #2: DDR3-1600 CL9-9-9-27 @1.5V
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