Panasonic 2SA2174J User Manual
Transistors
Publication date: November 2005
SJC00342AED
1
2SA2174J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6054J
Complementary to 2SC6054J
Features
High forward current transfer ratio h
FE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
60
V
Collector-emitter voltage (Base open)
V
CEO
−
50
V
Emitter-base voltage (Collector open)
V
EBO
−
7
V
Collector current
I
C
−
100
mA
Peak collector current
I
CP
−
200
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to +125
°
C
Electrical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= −10 µA, I
E
= 0
−
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= −2 mA, I
B
= 0
−
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −10 µA, I
C
= 0
−
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0
−
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
B
= 0
−
100
µ
A
Forward current transfer ratio
h
FE
V
CE
= −10 V, I
C
= −2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA
−
0.2
−
0.5
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
(Common base, input open circuited)
(Common base, input open circuited)
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz
2.2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: 7L
Unit: mm
1: Base
2: Emitter
3: Collector
SSMini3-F1 Package
0.27
±
0.02
3
1
2
0.12
+0.03
–0.01
0.80
±0.
05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.0
5
–0.03
(0.375)
5
°
5°
1.60
+0.05
–0.03
1.00
±
0.05
(0.50)(0.50)
+0.0
5
–0.03
This product complies with the RoHS Directive (EU 2002/95/EC).