Panasonic 2SB1320A User Manual
Transistors
1
Publication date: March 2003
SJC00078BED
2SB1320A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1991A
■ Features
• High forward current transfer ratio h
FE
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−60
V
Collector-emitter voltage (Base open)
V
CEO
−50
V
Emitter-base voltage (Collector open)
V
EBO
−7
V
Collector current
I
C
−100
mA
Peak collector current
I
CP
−200
mA
Collector power dissipation
P
C
400
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= −10 µA, I
E
= 0
−60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= −2 mA, I
B
= 0
−50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −10 µA, I
C
= 0
−7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0
−1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −20 V, I
B
= 0
−1
µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA
−1
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Product of no-rank is not classified and have no marking symbol for rank.
6.9
±0.1
2.5
±0.1
0.45
1.05
±0.05
2.5
±0.5
1
2
3
2.5
±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.8)
(1.0)
(0.85)
3.5
±
0.1
14.5
±
0.5
(0.7)
(4.0)
0.65 max.
Unit: mm
1: Emitter
2: Collector
3: Base
2: Collector
3: Base
MT-1-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).