Panasonic 2SC3757 User Manual
Transistors
1
Publication date: February 2004
SJC00136CED
2SC3757
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 15 V, I
E
= 0
0.1
µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 4 V, I
C
= 0
0.1
µA
Forward current transfer ratio
*
h
FE
V
CE
= 1 V, I
C
= 10 mA
60
200
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
0.17
0.25
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 10 mA, I
B
= 1 mA
1.0
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz
450
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2
6
pF
(Common base, input open circuited)
Turn-on time
t
on
Refer to the switching time measurement
17
ns
Turn-off time
t
off
circuit
17
ns
Storage time
t
stg
10
ns
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
40
V
Collector-emitter voltage (E-B short)
V
CES
40
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
100
mA
Peak collector current
I
CP
300
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Marking Symbol: 2Y
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank
Q
R
h
FE
60 to 120
90 to 200
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).