Panasonic 2SB1463G User Manual
Transistors
1
Publication date: May 2007
SJC00388AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1463G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC2440G
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
• SS-Mini type package, allowing downsizing of the equipment and
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−150
V
Collector-emitter voltage (Base open)
V
CEO
−150
V
Emitter-base voltage (Collector open)
V
EBO
−5
V
Collector current
I
C
−50
mA
Peak collector current
I
CP
−100
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= −100 µA, I
B
= 0
−150
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −10 µA, I
C
= 0
−5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −100 V, I
E
= 0
−1
µA
Forward current transfer ratio
*
h
FE
V
CE
= −5 V, I
C
= −10 mA
130
330
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −30 mA, I
B
= −3 mA
−1
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz
4
pF
(Common base, input open circuited)
Noise voltage
NV
V
CE
= −10 V, I
C
= −1 mA, G
V
= 80 dB
150
mV
R
g
= 100 kΩ, Function = FLAT
Rank
R
S
h
FE
130 to
220
185 to
330
■ Package
• Code
SSMini3-F3
• Marking Symbol: I
• Pin Name
• Pin Name
1. Base
2. Emitter
3. Collector
2. Emitter
3. Collector